2PD2150,115
NXP Semiconductors
NXP Semiconductors
NEXPERIA 2PD2150 - POWER BIPOLAR
$0.07
Available to order
Reference Price (USD)
1,000+
$0.12600
2,000+
$0.11480
5,000+
$0.10920
10,000+
$0.10080
25,000+
$0.09520
50,000+
$0.09240
Exquisite packaging
Discount
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Enhance your circuit designs with the 2PD2150,115 Bipolar Junction Transistor (BJT) from NXP Semiconductors. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The 2PD2150,115 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust NXP Semiconductors to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
- Power - Max: 2 W
- Frequency - Transition: 220MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
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