2SA1052MDTR-E
Renesas Electronics America Inc
Renesas Electronics America Inc
TRANS PNP 30V 0.1A 3MPAK
$0.10
Available to order
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$0.099
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$0.098
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$0.097
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$0.096
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$0.095
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Enhance your circuit designs with the 2SA1052MDTR-E Bipolar Junction Transistor (BJT) from Renesas Electronics America Inc. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The 2SA1052MDTR-E is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Renesas Electronics America Inc to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 12V
- Power - Max: 150 mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-MPAK
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