2SA1362-GR,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 15V 0.8A SMINI
$0.41
Available to order
Reference Price (USD)
1+
$0.41000
500+
$0.4059
1000+
$0.4018
1500+
$0.3977
2000+
$0.3936
2500+
$0.3895
Exquisite packaging
Discount
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The 2SA1362-GR,LF Bipolar Junction Transistor (BJT) from Toshiba Semiconductor and Storage is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the 2SA1362-GR,LF is a reliable component for demanding applications. Toshiba Semiconductor and Storage's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 15 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 8mA, 400mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
- Power - Max: 200 mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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