2SA1943N(S1,E,S)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 230V 15A TO3P
$2.51
Available to order
Reference Price (USD)
1+
$2.61000
10+
$2.36100
25+
$2.10800
100+
$1.89710
250+
$1.68632
500+
$1.47552
1,000+
$1.22257
2,500+
$1.13825
5,000+
$1.12420
Exquisite packaging
Discount
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Upgrade your electronic designs with the 2SA1943N(S1,E,S) Bipolar Junction Transistor (BJT) by Toshiba Semiconductor and Storage. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the 2SA1943N(S1,E,S) is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Toshiba Semiconductor and Storage for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 15 A
- Voltage - Collector Emitter Breakdown (Max): 230 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Power - Max: 150 W
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P(N)
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