2SA2154MFV-Y,L3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 50V 0.15A VESM
$0.20
Available to order
Reference Price (USD)
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$0.20000
500+
$0.198
1000+
$0.196
1500+
$0.194
2000+
$0.192
2500+
$0.19
Exquisite packaging
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Optimize your electronic systems with the 2SA2154MFV-Y,L3F Bipolar Junction Transistor (BJT) from Toshiba Semiconductor and Storage. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the 2SA2154MFV-Y,L3F delivers superior performance in diverse environments. Toshiba Semiconductor and Storage's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 150 mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
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