BUJ302AD,118
NXP USA Inc.
NXP USA Inc.
NOW WEEN - BUJ302AD - POWER BIPO
$0.33
Available to order
Reference Price (USD)
2,500+
$0.30450
5,000+
$0.28350
12,500+
$0.28000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the BUJ302AD,118 Bipolar Junction Transistor (BJT) from NXP USA Inc.. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The BUJ302AD,118 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust NXP USA Inc. to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 3.5A
- Current - Collector Cutoff (Max): 250mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 800mA, 3V
- Power - Max: 80 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
Related Products
NXP USA Inc.
PUMB2/DG/B3115
onsemi
2SC4169
Microchip Technology
JANTXV2N3019
Panjit International Inc.
BC817-25-AU_R1_000A1
NXP Semiconductors
PBSS4230QAZ
NTE Electronics, Inc
NTE2404
NXP USA Inc.
PDTD143EU135
Diodes Incorporated
MMSTA63-7-F
Linear Integrated Systems, Inc.
LS3250SA DIE
NTE Electronics, Inc