2SB1121T-TD-E
onsemi
onsemi
TRANS PNP 25V 2A PCP
$0.54
Available to order
Reference Price (USD)
1,000+
$0.22152
2,000+
$0.20198
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the 2SB1121T-TD-E Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The 2SB1121T-TD-E is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust onsemi to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 25 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
- Power - Max: 500 mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
Related Products
Microchip Technology
JANTX2N5683
STMicroelectronics
BUF420AW
Panjit International Inc.
BC857AW-AU_R1_000A1
Infineon Technologies
BCR39PN-E6327
onsemi
2N4403RLRA
Nexperia USA Inc.
2PD601ASL,235
Nexperia USA Inc.
BC850B,235
Fairchild Semiconductor
KSC5047TU
NTE Electronics, Inc
NTE123
Nexperia USA Inc.