2SC2853E-E
Renesas Electronics America Inc
Renesas Electronics America Inc
SMALL SIGNAL BIPOLAR TRANSTR NPN
$0.22
Available to order
Reference Price (USD)
1+
$0.22000
500+
$0.2178
1000+
$0.2156
1500+
$0.2134
2000+
$0.2112
2500+
$0.209
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2SC2853E-E Bipolar Junction Transistor (BJT) by Renesas Electronics America Inc is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the 2SC2853E-E provides consistent performance in demanding applications. Choose Renesas Electronics America Inc for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Obsolete
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Diodes Incorporated
2DA1774QLP-7B
onsemi
PZTA28
Central Semiconductor Corp
CZT3906 TR PBFREE
Nexperia USA Inc.
PBSS302PD,115
Harris Corporation
2N3393
onsemi
2N3906TF
onsemi
BC638G
Microchip Technology
2N3743U4
onsemi
2SB1234-TB-E
Diodes Incorporated