2SC3365-E
Renesas Electronics America Inc
Renesas Electronics America Inc
POWER BIPOLAR TRANSISTOR NPN
$7.64
Available to order
Reference Price (USD)
1+
$7.64000
500+
$7.5636
1000+
$7.4872
1500+
$7.4108
2000+
$7.3344
2500+
$7.258
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2SC3365-E from Renesas Electronics America Inc is a high-quality Bipolar Junction Transistor (BJT) designed for precision and durability. This single BJT transistor is perfect for applications requiring fast switching and low power consumption, such as portable electronics and IoT devices. With its compact size and robust construction, the 2SC3365-E is a reliable choice for both commercial and industrial use. Trust Renesas Electronics America Inc to provide top-tier discrete semiconductor products that enhance the performance and longevity of your electronic systems.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
NTE Electronics, Inc
2N5089
onsemi
MPSW06RLRAG
STMicroelectronics
3STR1630
Microchip Technology
2N5877
onsemi
2SA1706T-AN
STMicroelectronics
BU931T
Nexperia USA Inc.
PUMH9/ZL135
onsemi
MTP1306
Diotec Semiconductor
BC860B
Microchip Technology