2SC3646T-P-TD-E
onsemi
onsemi
TRANS NPN 100V 1A PCP
$0.23
Available to order
Reference Price (USD)
1+
$0.23000
500+
$0.2277
1000+
$0.2254
1500+
$0.2231
2000+
$0.2208
2500+
$0.2185
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2SC3646T-P-TD-E Bipolar Junction Transistor (BJT) from onsemi is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the 2SC3646T-P-TD-E is a reliable component for demanding applications. onsemi's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
- Power - Max: 500 mW
- Frequency - Transition: 120MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
Related Products
Central Semiconductor Corp
2N4033 PBFREE
onsemi
2SC6082-1E
Microchip Technology
JANTX2N3636L
onsemi
2SC4135S-TL-E
NTE Electronics, Inc
NTE2318
Diodes Incorporated
ZXTP25020DFLTA
onsemi
BC557BTF
Panjit International Inc.
BC817-25W_R1_00001
onsemi
KSA1015GRTA-ON
Nexperia USA Inc.