2SC3650-TD-E
Sanyo
Sanyo
NPN EPITAXIAL PLANAR SILICON
$0.23
Available to order
Reference Price (USD)
1+
$0.23000
500+
$0.2277
1000+
$0.2254
1500+
$0.2231
2000+
$0.2208
2500+
$0.2185
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the 2SC3650-TD-E Bipolar Junction Transistor (BJT) by Sanyo. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the 2SC3650-TD-E delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Sanyo for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
onsemi
MJD148T4G
onsemi
MJD31CT4G
NTE Electronics, Inc
NTE238
onsemi
TIP30CTU
Nexperia USA Inc.
BC847B,235
Diodes Incorporated
FCX619TA
Microchip Technology
JANTX2N1613L
Diodes Incorporated
FZT749QTC
Infineon Technologies
BCP49
onsemi