2SC5227A-5-TB-E
onsemi
onsemi
RF TRANS NPN 10V 7GHZ 3CP
$0.53
Available to order
Reference Price (USD)
3,000+
$0.16247
6,000+
$0.15254
15,000+
$0.14261
30,000+
$0.14095
Exquisite packaging
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Enhance your RF designs with the 2SC5227A-5-TB-E, a high-efficiency Bipolar Junction Transistor (BJT) from onsemi. As part of the Discrete Semiconductor Products family, this transistor is tailored for RF applications, providing superior amplification and signal integrity. Its high-frequency performance and low distortion make it suitable for use in TV tuners, wireless microphones, and RF identification systems. The 2SC5227A-5-TB-E features high current gain, excellent thermal characteristics, and long-term reliability. Whether for commercial or industrial use, this transistor delivers consistent results. Trust onsemi for high-quality RF BJTs that meet the toughest demands.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): 1dB @ 1GHz
- Gain: 12dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
- Current - Collector (Ic) (Max): 70mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-CP
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