2SC5245A-4-TL-E
onsemi
onsemi
RF TRANS NPN 10V 8GHZ 3MCP
$0.80
Available to order
Reference Price (USD)
3,000+
$0.22328
6,000+
$0.20963
15,000+
$0.19598
30,000+
$0.19370
Exquisite packaging
Discount
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Discover the 2SC5245A-4-TL-E, a premium RF Bipolar Junction Transistor (BJT) by onsemi, part of the Discrete Semiconductor Products lineup. This transistor is engineered for high-frequency applications, delivering outstanding performance in RF amplification and switching. Its advanced design ensures minimal signal loss and high efficiency, making it perfect for use in mobile communication, broadcast equipment, and satellite systems. The 2SC5245A-4-TL-E boasts features like high power gain, low intermodulation distortion, and superior thermal management. Whether you're designing RF amplifiers, oscillators, or mixers, this transistor provides the reliability and performance you need. Choose onsemi for cutting-edge RF BJT solutions.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 0.9dB ~ 3dB @ 1GHz ~ 1.5GHz
- Gain: 10dB
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 5V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: 3-MCP
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