BFR35APE6327
Infineon Technologies
Infineon Technologies
LOW-NOISE TRANSISTOR
$0.10
Available to order
Reference Price (USD)
1+
$0.10000
500+
$0.099
1000+
$0.098
1500+
$0.097
2000+
$0.096
2500+
$0.095
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your RF circuits with the BFR35APE6327, a high-efficiency Bipolar Junction Transistor (BJT) from Infineon Technologies. Part of the Discrete Semiconductor Products lineup, this transistor is designed for superior RF amplification and switching. Its high gain and low noise characteristics make it perfect for communication systems, broadcast equipment, and RF modules. The BFR35APE6327 offers excellent thermal stability, high power handling, and long-lasting performance. Whether for consumer electronics or industrial applications, this transistor delivers consistent results. Choose Infineon Technologies for innovative RF BJT technology that powers modern communication.
Specifications
- Product Status: Active
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Infineon Technologies
BFP181E7764HTSA1
onsemi
MCH4014-TL-H
Infineon Technologies
BGR405H6327XTSA1
NTE Electronics, Inc
NTE316
NXP USA Inc.
BFG540W/XR,135
NXP USA Inc.
BFU550XAR
onsemi
MSC2295-CT1
Infineon Technologies
BFR340L3E6327XTMA1
onsemi
2SC5347AE-TD-E
onsemi