MMBTH10M3T5G
onsemi
onsemi
RF TRANS NPN 25V 650MHZ SOT723
$0.33
Available to order
Reference Price (USD)
8,000+
$0.04580
16,000+
$0.03893
24,000+
$0.03664
56,000+
$0.03435
200,000+
$0.02977
Exquisite packaging
Discount
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Upgrade your RF circuits with the MMBTH10M3T5G, a high-efficiency Bipolar Junction Transistor (BJT) from onsemi. Part of the Discrete Semiconductor Products lineup, this transistor is designed for superior RF amplification and switching. Its high gain and low noise characteristics make it perfect for communication systems, broadcast equipment, and RF modules. The MMBTH10M3T5G offers excellent thermal stability, high power handling, and long-lasting performance. Whether for consumer electronics or industrial applications, this transistor delivers consistent results. Choose onsemi for innovative RF BJT technology that powers modern communication.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 25V
- Frequency - Transition: 650MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 265mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
- Current - Collector (Ic) (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: SOT-723
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