MMBTH10LT3G
onsemi
onsemi
RF TRANS NPN 25V 650MHZ SOT23-3
$0.03
Available to order
Reference Price (USD)
1+
$0.03451
500+
$0.0341649
1000+
$0.0338198
1500+
$0.0334747
2000+
$0.0331296
2500+
$0.0327845
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing the MMBTH10LT3G, a high-performance RF Bipolar Junction Transistor (BJT) from onsemi, designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The MMBTH10LT3G features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on onsemi for top-tier RF BJT solutions.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 25V
- Frequency - Transition: 650MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
- Current - Collector (Ic) (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
Related Products
Diodes Incorporated
MMBTH10Q-7-F
MACOM Technology Solutions
MRF10005
Infineon Technologies
BF799E6327HTSA1
Renesas Electronics America Inc
2SC5509-T2-A
NTE Electronics, Inc
NTE2687
Infineon Technologies
BFP196WH6740
Infineon Technologies
BFR380TE6327
Diodes Incorporated
BFS17NTA
Fairchild Semiconductor
MMBTH10RG
NTE Electronics, Inc