BF799E6327HTSA1
Infineon Technologies
Infineon Technologies
RF TRANS NPN 20V 800MHZ SOT23-3
$0.08
Available to order
Reference Price (USD)
1+
$0.08000
500+
$0.0792
1000+
$0.0784
1500+
$0.0776
2000+
$0.0768
2500+
$0.076
Exquisite packaging
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The BF799E6327HTSA1 RF Bipolar Junction Transistor (BJT) by Infineon Technologies is a standout in the Discrete Semiconductor Products category. Tailored for high-frequency applications, this transistor provides outstanding amplification with minimal noise. Its robust design ensures reliability in demanding environments, making it ideal for use in RF transceivers, radar systems, and wireless infrastructure. Key features include high gain bandwidth, excellent thermal resistance, and stable operation. Applications extend to automotive, aerospace, and IoT devices. Trust Infineon Technologies for high-performance RF BJTs that drive technological advancement.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 800MHz
- Noise Figure (dB Typ @ f): 3dB @ 100MHz
- Gain: -
- Power - Max: 280mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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