BLF7G22L-130112
NXP USA Inc.
NXP USA Inc.
RF POWER TRANSISTORS
$80.90
Available to order
Reference Price (USD)
1+
$80.90000
500+
$80.091
1000+
$79.282
1500+
$78.473
2000+
$77.664
2500+
$76.855
Exquisite packaging
Discount
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Discover the BLF7G22L-130112, a premium RF Bipolar Junction Transistor (BJT) by NXP USA Inc., part of the Discrete Semiconductor Products lineup. This transistor is engineered for high-frequency applications, delivering outstanding performance in RF amplification and switching. Its advanced design ensures minimal signal loss and high efficiency, making it perfect for use in mobile communication, broadcast equipment, and satellite systems. The BLF7G22L-130112 boasts features like high power gain, low intermodulation distortion, and superior thermal management. Whether you're designing RF amplifiers, oscillators, or mixers, this transistor provides the reliability and performance you need. Choose NXP USA Inc. for cutting-edge RF BJT solutions.
Specifications
- Product Status: Active
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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