2SC5501A-4-TR-E
onsemi
onsemi
2SC5501A - RF TRANSISTOR, 10V, 7
$0.11
Available to order
Reference Price (USD)
1+
$0.11000
500+
$0.1089
1000+
$0.1078
1500+
$0.1067
2000+
$0.1056
2500+
$0.1045
Exquisite packaging
Discount
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The 2SC5501A-4-TR-E RF Bipolar Junction Transistor (BJT) by onsemi is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the 2SC5501A-4-TR-E is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose onsemi for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Active
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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