2SC5551AE-TD-E
onsemi
onsemi
RF TRANS NPN 30V 3.5GHZ PCP
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2SC5551AE-TD-E RF Bipolar Junction Transistor (BJT) by onsemi is a standout in the Discrete Semiconductor Products category. Tailored for high-frequency applications, this transistor provides outstanding amplification with minimal noise. Its robust design ensures reliability in demanding environments, making it ideal for use in RF transceivers, radar systems, and wireless infrastructure. Key features include high gain bandwidth, excellent thermal resistance, and stable operation. Applications extend to automotive, aerospace, and IoT devices. Trust onsemi for high-performance RF BJTs that drive technological advancement.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 30V
- Frequency - Transition: 3.5GHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 1.3W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
- Current - Collector (Ic) (Max): 300mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
Related Products
CEL
NE68039R-T1-A
Infineon Technologies
BFP405E6327BTSA1
Broadcom Limited
AT-42086-TR1G
Infineon Technologies
BFR193WE6327
CEL
UPA814T-T1
onsemi
MPSH81_D26Z
Fairchild Semiconductor
KSC3123YMTF
Broadcom Limited
AT-41511-TR1
Infineon Technologies
BFG 19S E6327
Infineon Technologies