UPA814T-T1
CEL
CEL
RF TRANS 2 NPN 6V 9GHZ 6SO
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Enhance your RF designs with the UPA814T-T1, a high-efficiency Bipolar Junction Transistor (BJT) from CEL. As part of the Discrete Semiconductor Products family, this transistor is tailored for RF applications, providing superior amplification and signal integrity. Its high-frequency performance and low distortion make it suitable for use in TV tuners, wireless microphones, and RF identification systems. The UPA814T-T1 features high current gain, excellent thermal characteristics, and long-term reliability. Whether for commercial or industrial use, this transistor delivers consistent results. Trust CEL for high-quality RF BJTs that meet the toughest demands.
Specifications
- Product Status: Obsolete
- Transistor Type: 2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max): 6V
- Frequency - Transition: 9GHz
- Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
- Gain: -
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-SO
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