2N5770_D27Z
onsemi
onsemi
RF TRANS NPN 15V TO92-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the 2N5770_D27Z, a cutting-edge RF Bipolar Junction Transistor (BJT) from onsemi, part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The 2N5770_D27Z features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose onsemi for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): 6dB @ 60MHz
- Gain: 15dB
- Power - Max: 350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
Related Products
Infineon Technologies
BFR 949L3 E6327
CEL
UPA814T-A
Ampleon USA Inc.
MZ0912B100Y,114
Fairchild Semiconductor
FPNH10
NXP USA Inc.
BFS540,115
CEL
NE68130-T1-R34-A
Analog Devices Inc./Maxim Integrated
MAX2601ESA-T
Broadcom Limited
AT-32033-TR1G
onsemi
MPS3563
NXP USA Inc.