MPS3563
onsemi
onsemi
RF TRANS NPN 12V 1.5GHZ TO92
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MPS3563 RF Bipolar Junction Transistor (BJT) by onsemi is a standout in the Discrete Semiconductor Products category. Tailored for high-frequency applications, this transistor provides outstanding amplification with minimal noise. Its robust design ensures reliability in demanding environments, making it ideal for use in RF transceivers, radar systems, and wireless infrastructure. Key features include high gain bandwidth, excellent thermal resistance, and stable operation. Applications extend to automotive, aerospace, and IoT devices. Trust onsemi for high-performance RF BJTs that drive technological advancement.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 1.5GHz
- Noise Figure (dB Typ @ f): 6.5dB @ 60MHz
- Gain: 14dB @ 200MHz
- Power - Max: 350W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
Related Products
NXP USA Inc.
BFG520W/X,115
Fairchild Semiconductor
KSC1674COBU
NXP USA Inc.
BFG10,215
NXP USA Inc.
BFG93A/X,215
Broadcom Limited
AT-32011-BLKG
STMicroelectronics
SD1274
NXP USA Inc.
BFR93AW,115
Toshiba Semiconductor and Storage
MT3S20TU(TE85L)
CEL
NE68139R-T1
CEL