MZ0912B100Y,114
Ampleon USA Inc.
Ampleon USA Inc.
RF TRANS NPN 20V 1.215GHZ CDFM2
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MZ0912B100Y,114 by Ampleon USA Inc. is a state-of-the-art RF Bipolar Junction Transistor (BJT) that stands out in the Discrete Semiconductor Products category. Designed for high-frequency applications, this transistor offers exceptional linearity and low noise, making it ideal for RF amplification. Its compact design and high power handling capability ensure reliable performance in critical applications such as base stations, military communication, and medical devices. Key attributes include high gain bandwidth, excellent thermal resistance, and stable operation under varying conditions. Upgrade your RF circuits with the MZ0912B100Y,114 from Ampleon USA Inc., a leader in semiconductor innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 1.215GHz
- Noise Figure (dB Typ @ f): -
- Gain: 7.6dB
- Power - Max: 290W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 6A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-443A
- Supplier Device Package: CDFM2
Related Products
Fairchild Semiconductor
FPNH10
NXP USA Inc.
BFS540,115
CEL
NE68130-T1-R34-A
Analog Devices Inc./Maxim Integrated
MAX2601ESA-T
Broadcom Limited
AT-32033-TR1G
onsemi
MPS3563
NXP USA Inc.
BFG520W/X,115
Fairchild Semiconductor
KSC1674COBU
NXP USA Inc.
BFG10,215
NXP USA Inc.