2SC5551AF-TD-E
onsemi
onsemi
RF TRANS NPN 30V 3.5GHZ PCP
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The 2SC5551AF-TD-E RF Bipolar Junction Transistor (BJT) by onsemi is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the 2SC5551AF-TD-E is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose onsemi for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 30V
- Frequency - Transition: 3.5GHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 1.3W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 50mA, 5V
- Current - Collector (Ic) (Max): 300mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
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