2SC6023-TR-E
onsemi
onsemi
NPN 35MA 3.5V FT=14.5G
$0.06
Available to order
Reference Price (USD)
1+
$0.06000
500+
$0.0594
1000+
$0.0588
1500+
$0.0582
2000+
$0.0576
2500+
$0.057
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The 2SC6023-TR-E from onsemi is a high-performance RF Bipolar Junction Transistor (BJT) designed for demanding applications in the Discrete Semiconductor Products category. This transistor excels in radio frequency (RF) amplification, offering exceptional gain and low noise characteristics. With its robust construction and reliable performance, the 2SC6023-TR-E is ideal for use in communication systems, RF modules, and signal processing circuits. Key features include high transition frequency, excellent thermal stability, and low distortion, making it a top choice for engineers and designers. Applications include wireless communication devices, radar systems, and RF transceivers. Trust onsemi for superior quality and innovation in RF BJT technology.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 3.5V
- Frequency - Transition: 14.5GHz
- Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
- Gain: 9.5dB ~ 11dB
- Power - Max: 120mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 15mA, 3V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: 4-MCP
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