2SD1223(TE16L1,NQ)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN DARL 80V 4A PW-MOLD
$0.40
Available to order
Reference Price (USD)
1+
$0.39750
500+
$0.393525
1000+
$0.38955
1500+
$0.385575
2000+
$0.3816
2500+
$0.377625
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2SD1223(TE16L1,NQ) by Toshiba Semiconductor and Storage is a premium Bipolar Junction Transistor (BJT) designed for superior performance in various electronic applications. This single BJT transistor features high current handling and fast switching speeds, making it ideal for power management and control systems. Commonly used in automotive electronics, LED drivers, and power supplies, the 2SD1223(TE16L1,NQ) ensures efficient and stable operation. Backed by Toshiba Semiconductor and Storage's reputation for quality, this transistor is a trusted choice for engineers and designers seeking reliable discrete semiconductor solutions.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 6mA, 3A
- Current - Collector Cutoff (Max): 20µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 2V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PW-MOLD
Related Products
Infineon Technologies
BCV27E6327HTSA1
Fairchild Semiconductor
FJX945GTF
Infineon Technologies
BSP61E6327
onsemi
2N3906TAR
onsemi
BC847AMTF
onsemi
MMBT2222ALT1G
onsemi
CPH6223-TL-E
Microchip Technology
JANTX2N3506
onsemi
BC847CWT1
Sanyo