2SD1527-E
Renesas Electronics America Inc
Renesas Electronics America Inc
POWER BIPOLAR TRANSISTOR NPN
$1.16
Available to order
Reference Price (USD)
1+
$1.16000
500+
$1.1484
1000+
$1.1368
1500+
$1.1252
2000+
$1.1136
2500+
$1.102
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the 2SD1527-E Bipolar Junction Transistor (BJT) by Renesas Electronics America Inc. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the 2SD1527-E delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Renesas Electronics America Inc for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
NTE Electronics, Inc
NTE374
onsemi
FJL4315OTU
Diotec Semiconductor
BC547BBK
Fairchild Semiconductor
2SA1699E-PM-AA
Panjit International Inc.
BC858A_R1_00001
Toshiba Semiconductor and Storage
2SA1721OTE85LF
Microchip Technology
2N5407
Microchip Technology
2N5321
Central Semiconductor Corp
2N3903 PBFREE
onsemi