2SD1623T-TD-E
onsemi
onsemi
TRANS NPN 50V 2A PCP
$0.59
Available to order
Reference Price (USD)
1,000+
$0.21544
2,000+
$0.19734
5,000+
$0.18528
10,000+
$0.17321
25,000+
$0.17120
Exquisite packaging
Discount
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Enhance your circuit designs with the 2SD1623T-TD-E Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The 2SD1623T-TD-E is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust onsemi to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
- Power - Max: 500 mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
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