2SD1805F-E
onsemi
onsemi
TRANS NPN 20V 5A TP
$0.20
Available to order
Reference Price (USD)
1+
$0.20000
500+
$0.198
1000+
$0.196
1500+
$0.194
2000+
$0.192
2500+
$0.19
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the 2SD1805F-E Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The 2SD1805F-E is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust onsemi to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
- Power - Max: 1 W
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: TP
Related Products
onsemi
2N5401ZL1
NTE Electronics, Inc
NTE102A
Yangzhou Yangjie Electronic Technology Co.,Ltd
S8050-H-F2-0001HF
Microchip Technology
2N4232A
Nexperia USA Inc.
PBSS5250XZ
Nexperia USA Inc.
PBSS4140DPN/DG/B2,115
Fairchild Semiconductor
BC80840MTF
Diodes Incorporated
ZTX855
Central Semiconductor Corp
MPS3415 TIN/LEAD
Diodes Incorporated