NTE102A
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP 1A TO1
$8.83
Available to order
Reference Price (USD)
1+
$8.83000
500+
$8.7417
1000+
$8.6534
1500+
$8.5651
2000+
$8.4768
2500+
$8.3885
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the NTE102A Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the NTE102A delivers superior performance in diverse environments. NTE Electronics, Inc's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: 170mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 25µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 69 @ 300mA, 0V
- Power - Max: 650 mW
- Frequency - Transition: -
- Operating Temperature: 90°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-1-3 Metal Can
- Supplier Device Package: TO-1
Related Products
Yangzhou Yangjie Electronic Technology Co.,Ltd
S8050-H-F2-0001HF
Microchip Technology
2N4232A
Nexperia USA Inc.
PBSS5250XZ
Nexperia USA Inc.
PBSS4140DPN/DG/B2,115
Fairchild Semiconductor
BC80840MTF
Diodes Incorporated
ZTX855
Central Semiconductor Corp
MPS3415 TIN/LEAD
Diodes Incorporated
DSS4160U-7
Fairchild Semiconductor
TN6726A
Diodes Incorporated