2SD2106-E
Renesas Electronics America Inc
Renesas Electronics America Inc
POWER BIPOLAR TRANSISTOR NPN
$1.62
Available to order
Reference Price (USD)
1+
$1.62000
500+
$1.6038
1000+
$1.5876
1500+
$1.5714
2000+
$1.5552
2500+
$1.539
Exquisite packaging
Discount
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Discover the 2SD2106-E Bipolar Junction Transistor (BJT) from Renesas Electronics America Inc, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the 2SD2106-E is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose Renesas Electronics America Inc for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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