2SJ190-TD-E
Sanyo
Sanyo
NPN EPITAXIAL PLANAR SILICON
$0.36
Available to order
Reference Price (USD)
1+
$0.36000
500+
$0.3564
1000+
$0.3528
1500+
$0.3492
2000+
$0.3456
2500+
$0.342
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the 2SJ190-TD-E Bipolar Junction Transistor (BJT) by Sanyo. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the 2SJ190-TD-E delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Sanyo for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Central Semiconductor Corp
CXT5401 TR PBFREE
onsemi
NSS20500UW3T2G
Diodes Incorporated
ZTX758STZ
onsemi
BC856ALT1
Diodes Incorporated
2DD2652-7
NTE Electronics, Inc
MJE4353
Nexperia USA Inc.
BST51,115
Nexperia USA Inc.
BC856BQCZ
Nexperia USA Inc.
2PA1576R,115
Micro Commercial Co