2SJ358C(0)-T1-AZ
Renesas Electronics America Inc
Renesas Electronics America Inc
P-CHANNEL MOSFET
$0.80
Available to order
Reference Price (USD)
1+
$0.80000
500+
$0.792
1000+
$0.784
1500+
$0.776
2000+
$0.768
2500+
$0.76
Exquisite packaging
Discount
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Experience unmatched performance with the 2SJ358C(0)-T1-AZ Bipolar Junction Transistor (BJT) by Renesas Electronics America Inc. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the 2SJ358C(0)-T1-AZ delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Renesas Electronics America Inc for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -