2SK209-Y(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 10V 14MA SC59
$0.50
Available to order
Reference Price (USD)
3,000+
$0.15965
6,000+
$0.14935
15,000+
$0.14420
Exquisite packaging
Discount
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The 2SK209-Y(TE85L,F) from Toshiba Semiconductor and Storage sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Toshiba Semiconductor and Storage's 2SK209-Y(TE85L,F) for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 10 V
- Current - Continuous Drain (Id) @ 25°C: 14mA
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 150mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-59
- Package / Case: TO-236-3, SC-59, SOT-23-3
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