R6507ENJTL
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 650V 7A LPTS
$3.29
Available to order
Reference Price (USD)
1+
$3.29000
500+
$3.2571
1000+
$3.2242
1500+
$3.1913
2000+
$3.1584
2500+
$3.1255
Exquisite packaging
Discount
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The R6507ENJTL from Rohm Semiconductor sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Rohm Semiconductor's R6507ENJTL for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 78W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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