2SK3018T106
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 30V 100MA UMT3
$0.39
Available to order
Reference Price (USD)
3,000+
$0.06440
6,000+
$0.05600
15,000+
$0.04760
30,000+
$0.04480
75,000+
$0.04200
150,000+
$0.03920
Exquisite packaging
Discount
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The 2SK3018T106 from Rohm Semiconductor sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Rohm Semiconductor's 2SK3018T106 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
- Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 5 V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UMT3
- Package / Case: SC-70, SOT-323
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