NVTFS6H860NTAG
onsemi

onsemi
MOSFET N-CH 80V 8A/30A 8WDFN
$0.28
Available to order
Reference Price (USD)
1+
$0.28089
500+
$0.2780811
1000+
$0.2752722
1500+
$0.2724633
2000+
$0.2696544
2500+
$0.2668455
Exquisite packaging
Discount
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Meet the NVTFS6H860NTAG by onsemi, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The NVTFS6H860NTAG stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose onsemi.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 21.1mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN