FDME820NZT
onsemi
onsemi
MOSFET N-CH 20V 9A MICROFET
$0.99
Available to order
Reference Price (USD)
5,000+
$0.31928
10,000+
$0.30745
25,000+
$0.30100
Exquisite packaging
Discount
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Enhance your electronic projects with the FDME820NZT single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's FDME820NZT for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MicroFet 1.6x1.6 Thin
- Package / Case: 6-PowerUFDFN
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