NTE2378
NTE Electronics, Inc
NTE Electronics, Inc
MOSFET N-CHANNEL 900V 5A TO3P
$6.98
Available to order
Reference Price (USD)
1+
$6.98000
500+
$6.9102
1000+
$6.8404
1500+
$6.7706
2000+
$6.7008
2500+
$6.631
Exquisite packaging
Discount
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Upgrade your designs with the NTE2378 by NTE Electronics, Inc, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the NTE2378 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.6Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 120W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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