PSMN6R3-120ESQ
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 120V 70A I2PAK
$2.43
Available to order
Reference Price (USD)
1+
$2.79000
50+
$2.24740
100+
$2.02260
500+
$1.57312
1,000+
$1.30343
Exquisite packaging
Discount
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Meet the PSMN6R3-120ESQ by Nexperia USA Inc., a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The PSMN6R3-120ESQ stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Nexperia USA Inc..
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 207.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11384 pF @ 60 V
- FET Feature: -
- Power Dissipation (Max): 405W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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