FDD5690
onsemi
onsemi
MOSFET N-CH 60V 30A TO252
$1.59
Available to order
Reference Price (USD)
2,500+
$0.73024
5,000+
$0.69574
12,500+
$0.67110
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FDD5690 single MOSFET from onsemi is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the FDD5690 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 27mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
IXYS
IXFH120N20P
Alpha & Omega Semiconductor Inc.
AOTF2606L
Toshiba Semiconductor and Storage
SSM6K407TU,LF
Microchip Technology
APT8015JVR
STMicroelectronics
STD4N90K5
Toshiba Semiconductor and Storage
SSM3J35CT,L3F
STMicroelectronics
STL33N60DM2
Nexperia USA Inc.
PMN30XPAX
IXYS
IXTA2N100
Toshiba Semiconductor and Storage