TK11S10N1L,LQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 11A DPAK
$0.35
Available to order
Reference Price (USD)
1+
$0.34612
500+
$0.3426588
1000+
$0.3391976
1500+
$0.3357364
2000+
$0.3322752
2500+
$0.328814
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TK11S10N1L,LQ single MOSFET from Toshiba Semiconductor and Storage is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the TK11S10N1L,LQ is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 28mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
STMicroelectronics
SCTWA50N120
STMicroelectronics
STL19N65M5
onsemi
FQPF7N60
IXYS
IXTA3N100D2-TRL
Rohm Semiconductor
RCX511N25
Microchip Technology
APT22F80S
Microchip Technology
APT50M65JLL
Infineon Technologies
BSS806NEH6327XTSA1
Alpha & Omega Semiconductor Inc.
AOT11S65L
Vishay Siliconix