IXTA3N100D2-TRL
IXYS
IXYS
MOSFET N-CH 1000V 3A TO263
$3.63
Available to order
Reference Price (USD)
1+
$3.63356
500+
$3.5972244
1000+
$3.5608888
1500+
$3.5245532
2000+
$3.4882176
2500+
$3.451882
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXTA3N100D2-TRL by IXYS is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IXTA3N100D2-TRL is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 0V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Rohm Semiconductor
RCX511N25
Microchip Technology
APT22F80S
Microchip Technology
APT50M65JLL
Infineon Technologies
BSS806NEH6327XTSA1
Alpha & Omega Semiconductor Inc.
AOT11S65L
Vishay Siliconix
SIR516DP-T1-RE3
Vishay Siliconix
SI7370DP-T1-GE3
Microchip Technology
APT10078BFLLG
Infineon Technologies
IPP65R190C7FKSA1
Nexperia USA Inc.