SCTWA50N120
STMicroelectronics
STMicroelectronics
SICFET N-CH 1200V 65A HIP247
$38.53
Available to order
Reference Price (USD)
1+
$38.80000
10+
$36.05100
100+
$31.29300
Exquisite packaging
Discount
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Upgrade your designs with the SCTWA50N120 by STMicroelectronics, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SCTWA50N120 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 69mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 20 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 318W (Tc)
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247™
- Package / Case: TO-247-3
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