2SK3479-Z-E1-AZ
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 100V 83A TO-263
$2.03
Available to order
Reference Price (USD)
1+
$2.02659
500+
$2.0063241
1000+
$1.9860582
1500+
$1.9657923
2000+
$1.9455264
2500+
$1.9252605
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the 2SK3479-Z-E1-AZ from Renesas Electronics America Inc, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the 2SK3479-Z-E1-AZ ensures reliable performance in demanding environments. Upgrade your circuit designs with Renesas Electronics America Inc's cutting-edge technology today.
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 11mOhm @ 42A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 125W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263, TO-220SMD
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Infineon Technologies
AUIRFP4110
Toshiba Semiconductor and Storage
TW070J120B,S1Q
Infineon Technologies
IPP60R600P6XKSA1
Rohm Semiconductor
R6020KNXC7G
Alpha & Omega Semiconductor Inc.
AOSS21311C
Vishay Siliconix
SIHFS11N50A-GE3
Panjit International Inc.
PJD6NA40_R2_00001
Infineon Technologies
IPW90R340C3XKSA1
Infineon Technologies
IRFP4332PBF
Infineon Technologies