2SK3659-AZ
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 20V 65A TO220-3
$1.40
Available to order
Reference Price (USD)
1+
$1.40000
500+
$1.386
1000+
$1.372
1500+
$1.358
2000+
$1.344
2500+
$1.33
Exquisite packaging
Discount
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Meet the 2SK3659-AZ by Renesas Electronics America Inc, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The 2SK3659-AZ stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Renesas Electronics America Inc.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 5.7mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Isolated Tab
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