2SK4197FS
onsemi
onsemi
MOSFET N-CH 600V 3.3A TO220-3
$0.57
Available to order
Reference Price (USD)
1+
$0.57000
500+
$0.5643
1000+
$0.5586
1500+
$0.5529
2000+
$0.5472
2500+
$0.5415
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the 2SK4197FS by onsemi, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The 2SK4197FS stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose onsemi.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1.8A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 28W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Panjit International Inc.
PJP60R190E_T0_00001
Vishay Siliconix
SIHK075N60E-T1-GE3
Vishay Siliconix
SQ2364EES-T1_BE3
UnitedSiC
UF3SC120016K4S
NXP USA Inc.
BUK6507-75C,127
Microchip Technology
TN5325N3-G
Infineon Technologies
IRF640NSTRRPBF
STMicroelectronics
STP4LN80K5
Motorola
MTDF2N06HDR2
Infineon Technologies