3LN01C-TB-H
onsemi
onsemi
MOSFET N-CH 30V 150MA 3CP
$0.07
Available to order
Reference Price (USD)
1+
$0.07000
500+
$0.0693
1000+
$0.0686
1500+
$0.0679
2000+
$0.0672
2500+
$0.0665
Exquisite packaging
Discount
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The 3LN01C-TB-H by onsemi is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the 3LN01C-TB-H is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
- Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 1.58 nC @ 10 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 7 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 250mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-59-3/CP3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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