3N163 DIE
Linear Integrated Systems, Inc.
Linear Integrated Systems, Inc.
P-CHANNEL, SINGLE ENHANCEMENT MO
$2.36
Available to order
Reference Price (USD)
1+
$2.36000
500+
$2.3364
1000+
$2.3128
1500+
$2.2892
2000+
$2.2656
2500+
$2.242
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the 3N163 DIE by Linear Integrated Systems, Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the 3N163 DIE is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 50mA
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V
- Vgs(th) (Max) @ Id: 5V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -6.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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